Process for producing crystalline silicon nitride powder
US4929432A · kind A · utility
5Cited by
7References
18Claims
0Family size
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Key dates
| Filing date | Oct 19, 1988 |
| Grant date | May 29, 1990 |
| Priority date | — |
| Expiry date | Oct 19, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for producing crystalline silicon nitride powder by a gas phase reaction of ammonia (NH.sub.3) and silane (SiH.sub.4) with a molar ratio of 7:1 or above at a temperature of 900.degree. C. or above and the heating the as-reacted amorphous powders at a temperature of 1350.degree. C. to 1800.degree. C. to convert the powders to a highly pure and submicron crystalline silicon nitride powder comprising at least a 90% .alpha.-Si.sub.3 N.sub.4 phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.