Hall element device with depletion region protection barrier
US4929993A · kind A · utility
47Cited by
8References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 25, 1986 |
| Grant date | May 29, 1990 |
| Priority date | — |
| Expiry date | Apr 25, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
Abstract
An integrated circuit Hall element is disclosed. At least two current connection contacts and two sensor connection contacts are formed on the surface of the semiconductor body incorporating the Hall element. The active zone of the Hall element is located below the surface. A depletion region, depleted of mobile charge, is located between the surface and the active zone to provide isolation for the active zone, so that the Hall device output is linear and independent of changes in external temperature. A feedback circuit is provided to control the thickness of the depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.