Microwave plasma CVD apparatus having an improved microwave transmissive window
US4930442A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1988 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Mar 25, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO.sub.2, CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component .alpha.-alumina. In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.