Bilayer lithographic process
US4931351A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1989 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Jul 13, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: PA0 (a) forming a planarizing layer resistant to silicon uptake on a substrate; PA0 (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over the planarizing layer, PA0 (c) imagewise exposing the resist to activating radiation, PA0 (d) developing the exposed resist, PA0 (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: ##STR1## wherein: X.sup.1 and X.sup.2 are individually chloro or ##STR2## wherein R.sup.3 and R.sup.4 are individually H or alkyl; and PA2 R.sup.1 and R.sup.2 are individually H or alkyl; and PA0 (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.