Photoelectric conversion device having a common semiconductor layer for a portion of the photoelectric conversion element and a portion of the transfer transistor section
US4931661A · kind A · utility
30Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1989 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Sep 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.