Low-absorption circuit device for controlling a power transistor into the on state
US4931676A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1989 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Jan 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04123
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low-absorption circuit device for controlling into the on state a power transistor, in particular a D MOS transistor having conventional gate, drain, and source electrodes, and adapted to drive electrical loads by changing over from an off state to an on state in which there appears on the gate electrode a predetermined voltage value, comprises a first turn-on circuit connected to one pole of a voltage supply, a second turn-on circuit connected to another supply voltage pole, and a comparator having respective inputs connected to the gate electrode of the power transistor and to a reference voltage pole as well as respective outputs connected to each respective turn-on circuit to activate said circuits alternately based on a comparison of the gate voltage of the power transistor with the predetermined reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.