Method of manufacturing semiconductor capacitive element
US4931897A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1989 |
| Grant date | Jun 5, 1990 |
| Priority date | — |
| Expiry date | Aug 7, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A method of manufacturing a semiconductor capacitor provided with a substrate, a dielectric film formed on the substrate and a pair of electrode layers stacked on both sides of the dielectric film comprises a step of forming a polycrystalline silicon layer for serving as one of the electrode layers on the substrate, a step of making at least a surface region of the polycrystalline silicon layer amorphous, a step of forming the dielectric film on the polycrystalline silicon layer while maintaining an amorphous surface state, and a step of forming another one of the electrode layers on the dielectric film. The lower electrode of the capacitor has its surface or the whole layer made amorphous. The surface of the electrode which is amorphous has smooth surface configuration, thereby improving the quality of the dielectric film formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.