Electrophotographic photoreceptor having doped and/or bilayer amorphous silicon photosensitive layer
US4932859A · kind A · utility
9Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1988 |
| Grant date | Jun 12, 1990 |
| Priority date | — |
| Expiry date | Jul 5, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08285
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoreceptor having excellent dark resistance is disclosed, which comprises a photoconductive layer and a surface layer formed successively on a conductive substrate, wherein the photoconductive layer mainly comprises hydrogen-containing amorphous silicon, and the surface layer comprises amorphous carbon which contains not more than 50 atomic percent of hydrogen. The surface layer contains phosphorous or boron as a dopant and/or comprises two sublayers where the sublayer has a lower hydrogen content than the lower sublayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.