Germanosilicate spin-on glasses
US4935095A · kind A · utility
17Cited by
4References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1985 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Jun 21, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is disclosed for forming a planarized or smooth surface binary glass insulating film comprised of germanium dioxide and silicon dioxide by a spin-on process. The resulting structure has a film thickness uniformity which varies less than 5% over the surface of the wafer. The structure is formed by mixing a predetermined solution of TEOS and TEOG in a lower alcohol or ketone solvent and catalyzing by the addition of sufficient acid to raise the pH to 1.5 to 2.0 to favor gel formation. The resultant solution is then spun on at an RPM selected to give the desired film thickness for a given solids content of the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.