Optical recording medium
US4935336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1988 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Jun 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention is directed to an optical recording member including a thin film photosensitive layer provided on a base. The thin film photosensitive layer may vary between a low optical density state and a high optical density state when optical energy is applied thereto. This thin film photosensitive layer contains a first element which may be a metal or semimetal, a second element which is at least one selected from Te, Ge, Sn, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Mo, Rh, Pd, Ag, Cd, In, Ta, W, Pt, Au, Tl, Pb, Si, Sb, Bi, and an oxygen element. Part of the oyxgen element is bonded with the first element to form its oxide. The ratio x of the total number of atoms of the oxygen element to that of the first element, when the maximum valence of the first element in a stable oxide state is n, is according to the relation of 0<x>n/2. At least part of the second element exists in a non-oxide state. This thin film photosensitive layer is formed by a vacuum deposition or sputtering method. By irradiating the optical recording medium with light, information may be recorded or recorded information may be erased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.