Method of fabricating microwave FET having gate with submicron length
US4935377A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1989 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Aug 1, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/944
Abstract
Disclosed is a method of forming a uniform length gate electrode and contact for a microwave field-effect transistor where the gate electrode has a length of less than one micron. A photoresist plug is formed on the surface of a first photoresist layer, the plug functioning as a shadow mask in the subsequent deposition of a plasma-etch-resistant material (aluminum) over the surface of the plug and the first photoresist layer. A third photoresist layer is formed over the device structure whereby a contact region can be formed on the surface of the semiconductor sub-strate adjacent to the device region. Subsequently, the third photoresist layer is removed, and the previously shielded photoresist material over the gate electrode location is removed by plasma etch using the metal-covered plug and metal-covered first photoresist layer as a plasma-etch shield. A metal is then deposited in the exposed surface region for the gate electrode and contact, and thereafter the photoresist material is removed leaving the gate electrode and contact on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.