Method of making a semiconductor-insulator-semiconductor structure
US4935382A · kind A · utility
6Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1988 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Oct 31, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor epitaxial device structure is described in which there are alternate single crystal layers of semiconductor, insulator and semiconductor. A typical example is InP/CaF.sub.2 /InP. A process for producing such a structure is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.