Pulsed plasma apparatus and process
US4935661A · kind A · utility
145Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1986 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Jun 26, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.