Composite semiconductor device
US4935799A · kind A · utility
Inventors
Key dates
| Filing date | Dec 13, 1988 |
| Grant date | Jun 19, 1990 |
| Priority date | — |
| Expiry date | Dec 13, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/121
Abstract
Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type independently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; a second insulated gate electrode formed on the first semiconductor region located between the second and third semiconductor regions and exposed on the one main surface; an electrode which shorts the fourth and third semiconductor regions; another electrode which shorts the second and fifth semiconductor regions; and a further electrode provided in the first semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.