Method of fabrication of a P+nn+ diode and of a bipolar transistor incorporating this diode utilizing the effect of neutralization of donor atoms by atomic hydrogen
US4936781A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1989 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Aug 14, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
Abstract
A method of fabrication of a p+nn+ diode and a bipolar transistor which incorporates this diode, uitilizing the effect of neutralization of donor atoms by atomic hydrogen consists in forming a layer of Group III-Group V material of n+ type on a substrate of Group III-Group V material, locally implanting acceptor ions with a view to forming, in the surface, the p+ region of the diode adjacent to an intermediary n+ region forming two metal contacts at the surface of the layer of Group III-Group V material situated in proximity to one another and with respect to the p+ and n+ regions of the diode, the portion of the intermediary n+ region contiguous with the p+ region being without of metal contact, and hydrogenating the structure, to form in that portion an n region, with the other portion of the intermediary region being provided with a metal contact being constituting the n+ region of the p+nn+ diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.