Thin film oxide dielectric structure and method
US4936957A · kind A · utility
24Cited by
13References
58Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1988 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Mar 28, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metallic oxide such as aluminum oxide of significantly improved electrical properties is disclosed. The method of oxide formation includes a combination of soft porous anodization followed by transformation to a hard barrier form of oxide using inter alia low temperature electrolytes, constant voltage anodizing, and timely rate of current change responsive termination of the anodizing process. Use of the resulting oxide in electrical insulation, optic and other environments is contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.