Process of obtaining improved contrast in electron beam lithography
US4937174A · kind A · utility
1Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 14, 1989 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Jul 14, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved developer for PMMA, electron resist comprising an effective amount of MEK in combination with MIBK or CS alone or a mixture thereof and a process of obtaining improved contrast in electron beam lithography therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.