Strain sensor
US4937550A · kind A · utility
11Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1989 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Jan 27, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2293
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.