Bidirectional MOS switch
US4937642A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1989 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Feb 24, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/6874
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bidirectional semiconductor switch is produced in a semiconductor layer, such as silicon, arranged on an insulating base of, for example, sapphire. The switch has two highly doped main contact regions. Between these regions the switch has a voltage absorbing part comprising a weakly doped layer, located next to the surface of the semiconductor layer, of the same conductivity type as the main contact regions, and a weakly doped layer, located next to the base of the opposite conductivity type. Between each one of the contact regions and the weakly doped layer located near the surface, normally non-conducting MOS structures are arranged. By simultaneously controlling the two MOS structures to a conducting state, the switch becomes conducting and is able to carry current in an optional direction between the main contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.