Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
US4937651A · kind A · utility
15Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1986 |
| Grant date | Jun 26, 1990 |
| Priority date | — |
| Expiry date | Aug 22, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.