Method of manufacturing semiconductor devices, involving the detection of water
US4938847A · kind A · utility
3Cited by
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18Claims
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Assignee
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Key dates
| Filing date | Aug 18, 1989 |
| Grant date | Jul 3, 1990 |
| Priority date | — |
| Expiry date | Aug 18, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/121
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a method of semiconductor device fabrication involving the detection of water in a dielectric layer that is part of the body of such device. At relatively high values of a voltage applied across the dielectric layer, water that is present in the dielectric decomposes and releases protons. Varying the applied voltage gives rise to a displacement current. The released protons contribute an ionic component to the displacement current. The ionic component is detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.