Optically transparent electrically conductive semiconductor windows
US4939043A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1988 |
| Grant date | Jul 3, 1990 |
| Priority date | — |
| Expiry date | Oct 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.