Semiconductor device
US4941032A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1989 |
| Grant date | Jul 10, 1990 |
| Priority date | — |
| Expiry date | Jan 13, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A semiconductor device comprising an amorphous semiconductor which might contain microcrystal therein, and a metal electrode electrically connected to the amorphous semiconductor and containing Al as a first component; wherein at least one element selected from the group consisting of (i)Ag, (ii)Au, (iii)Ca, Mg, Mn, W, Cr or Cu, (iv)Zn or Ge, and (v)Fe, Mo, Ni, Pd, Pt, Ti, V or Zr is added, as an additional component of the metal electrode, to the first component. According the present invention, there can be prevented the diffusion of an element of a metal electrode into a semiconductor layer during the production and the use of a semiconductor device. Thereby, the degradation of properties of the semiconductor device can be substantially prevented. Further, the yield of products can be improved and the lifetime of products can be greatly lengthened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.