Patent · US Expired

Making an amorphous layer

US4942057A · kind A · utility

9Cited by
13References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 14, 1987
Grant dateJul 17, 1990
Priority date
Expiry dateAug 14, 2007

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0262
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Amorphous layers are made by decomposing one or several gaseous compounds which include an element or elements to be deposited. These are group 3 and 5 or group 4 elements but amorphous layers of other metals can also be made. The compound is added in a small concentration to a hot gas, preferably hydrogen, helium or argon and a diffusor accelerates the mixture while molecular clusters of the element or elements are formed and impinge upon a target for depositing thereon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.