Patent · US Expired

Power transistor monolithic integrated structure

US4942308A · kind A · utility

8Cited by

3References

6Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Gerhard Conzelmann · Echterdingen, DE
Karl Nagel · Gomaringen, DE
Gerhard Fiedler · Neckartailfingen, DE

Key dates

Filing date	Jan 25, 1989
Grant date	Jul 17, 1990
Priority date	—
Expiry date	Jan 25, 2009

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.