Solid state electronic device
US4942327A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1989 |
| Grant date | Jul 17, 1990 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A solid state electronic device having a thin film of an Al (aluminum) alloy Li (lithium) on the surface of a substrate for a surface acoustic wave (SAW). Interdigital electrodes, electric wiring patterns and bonding pads are formed by the thin film of the Li-added Al alloy. This thin film suppresses migration which occurs when a high density current is supplied to the device or a large amplitude SAW is generated. The thin film, which provides a small loss and relatively low hardness, provides a desired power handling capability and high yield of wire bonding. The this film assures high endurance to failure of the device and sufficient life of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.