High voltage semiconductor devices with reduced on-resistance
US4942440A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1988 |
| Grant date | Jul 17, 1990 |
| Priority date | — |
| Expiry date | Sep 9, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage P-N diode includes a P.sup.- substrate with a thin N.sup.- epitaxial layer thereon. An N.sup.+ cathode region extends into the N.sup.- epitaxial layer from the upper surface thereof. A P.sup.+ anode region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region. An N.sup.+ buried layer is situated between the P.sup.- substrate and the N.sup.- epitaxial layer, beneath the P.sup.+ anode region, and surrounds the N.sup.+ cathode region, as viewed from above. A further P.sup.+ region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region, and, in turn, is surrounded by the P.sup.+ anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P.sup.+ region to the P.sup.- substrate and to open circuit the further P.sup.+ region. With the further P.sup. + region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N.sup.+ emitter region extending into a P.sup.+ base region, which corresponds to the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.