Plasma reactor apparatus and method for treating a substrate
US4943345A · kind A · utility
67Cited by
4References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1989 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Mar 23, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.