Amorphous silicon photoreceptor
US4943503A · kind A · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1984 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Oct 10, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.