Charged particle beam lithography method
US4943730A · kind A · utility
4Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1989 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Sep 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charged particle beam lithography method wherein the workpiece material is mounted on a stage the position of which is detected by a laser interferometer. Patterns are expanded or reduced by a scaling factor by the steps of adjusting the gain of the deflection system controlling the charged particle beam and adjusting the size of movements of the stage in accordance with the scaling factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.