Surface emitting laser
US4943970A · kind A · utility
73Cited by
14References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 1989 |
| Grant date | Jul 24, 1990 |
| Priority date | — |
| Expiry date | Sep 21, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser fabricated from a substrate having top and bottom surfaces. A first stack of mirror layers of alternating different refractive indices are formed upon the substrate top surface. An active layer defining a mesa is formed on top of the first stack of mirror layers. A second stack of alternating different refractive indices mirror layers are formed upon the active layer mesa. A current confinement layer is formed about the side of the active laser mesa. A first contact is formed upon the substrate bottom surface while a second contact is formed upon a portion of said active layer remote from the active layer mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.