Method of processing an article in a supercritical atmosphere
US4944837A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Feb 28, 1989 |
| Grant date | Jul 31, 1990 |
| Priority date | — |
| Expiry date | Feb 28, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of processing an article, the article is introduced into a supercritical atmosphere which is formed in a pressure vessel and which atmosphere comprises carbon dioxide. When the article comprises an exposed resist film on a surface layer formed on a substrate, the exposed resist film is selectively removed to leave a predetermined pattern in the supercritical atmosphere and is thus processed into a patterned resist film. After the surface layer is selectively etched through the patterned resist film to form a patterned surface layer, the patterned resist film may be introduced into the supercritical atmosphere to be completely removed from the patterned surface layer. On processing the article, such as a compact disc, a mechanical parts, or the like, the article may be also introduced into the supercritical atmosphere to be cleaned up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.