Patent · US Expired

Apparatus for producing single crystals

US4944925A · kind A · utility

10Cited by
9References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 1989
Grant dateJul 31, 1990
Priority date
Expiry dateMay 25, 2009

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1068
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.