Method of laser-marking semiconductor devices
US4945204A · kind A · utility
63Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1989 |
| Grant date | Jul 31, 1990 |
| Priority date | — |
| Expiry date | Oct 19, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
The surface of the resin on a semiconductor device is subjected to a marking by a pulsed laser having an energy density of 3 to 60 J/cm.sup.2 and a pulse width of 0.1 ms or less. By applying the laser beam to the surface a resin encapsulation, the resin can be instantaneously burnt and vaporized, as a result of which, the quantity of the cinders from burning of the resin at the time of the laser-marking is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.