Method of bistable optical information storage using antiferroelectric phase PLZT ceramics
US4945514A · kind A · utility
2Cited by
2References
11Claims
0Family size
Inventor
Key dates
| Filing date | May 31, 1988 |
| Grant date | Jul 31, 1990 |
| Priority date | — |
| Expiry date | May 31, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.