Method of growing homogeneous crystals

US4946545A · kind A · utility

Assignee

• Avl Gesellschaft fur Verbrennungskraftmaschinen und Messtechnik m.b.H. Prof.Dr.Dr.h.c. Hans List · AT

Inventors

• Günter Engel · Leibnitz, AT
• Alfred Enko · Graz, AT
• Peter W. Krempl · Leibnitz, AT
• Uwe Posch · Graz, AT

Key dates

• Filing date: Aug 31, 1988
• Grant date: Aug 7, 1990
• Expiry date: Aug 31, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1096
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In order to prevent crystal seeds with retrograde solubility from dissolving in the hydrothermal growing solution at the beginning of the growing process, and to protect the finished crystal at the end of the growing process, and in order to reach the thermodynamic growth equilibrium as soon as possible, the proposal is put forward that the growing solution be prepared, pre-saturated and pre-heated to a temperature close to saturation temperature outside of the growing tank, and that, for the growing process proper, the hot growing solution be added to the pre-heated growing tank provided with crystal seeds, where it should be further heated to a temperature at which the crystals start growing, and, further, that the hot growing solution be quickly removed from the growing tank as soon as the growing process has been completed.