Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
US4946710A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1987 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Jun 2, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their respective solvents in proportions such that hydrolyze reaction rate for each metal precursor will be approximately equal. The precursors and solvents are mixed, and water is added to begin a hydrolysis reaction. After the hydrolysis the solution is heated to drive off the excess water and solvent to promote the formation of a sol-gel. The sol-gel is then applied to a thin substrate and sintered to produce the ferroelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.