Aperture forming method
US4946804A · kind A · utility
5Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1988 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Mar 30, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming through-holes in a multi-level interconnect system in which a layer of photo-resist is spun over a masking layer prior to mask-etching so that when the photo-resist is exposed and developed some remains in the bottom of through holes formed in the surface layer so as to protect the base layer from the mask-etching agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.