Semiconductor devices incorporating multilayer interference regions
US4947223A · kind A · utility
26Cited by
19References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1987 |
| Grant date | Aug 7, 1990 |
| Priority date | — |
| Expiry date | Aug 31, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.