Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4948623A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1989 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Sep 29, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Improved processes are described for the deposition of Cu and group IB metals such as Ag and Au. These processes include thermal CVD, photothermal depositions and photochemical deposition. The gaseous precursor which leads to successful deposition of high quality films at low temperatures includes a cyclopentadienyl ring, a two electron donor ligand, and the group IB metal in a +1 oxidation state. In addition, derivatives of the cyclopentadienyl ring can be used where the substituents on the ring include those selected from alkyl groups, halide groups, and psuedohalide groups. In addition, the two electron donor ligand can be selected from the group consisting of trivalent phosphines, amines and arsines. A representative precursor for the deposition of Cu is triethylphosphine cyclopentadienyl copper (I).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.