Polysilicon photoconductor for integrated circuits
US4948741A · kind A · utility
23Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Feb 23, 1989 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Feb 23, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.