Magnetic field sensor with ferromagnetic thin layers having magnetically antiparallel polarized components
US4949039A · kind A · utility
134Cited by
5References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 14, 1989 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Jun 14, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic field sensor comprises a stack of ferromagnetic layers advantageously separated by an intermediate layer of proper material and so arranged that the ferromagnetic layers are with one component in an antiparallel magnetization direction. The sensor is provided with terminals for passing an electric current through the stack and for detecting a voltage drop across the stack. The magnetic resistance change with such a stack is substantially greater than in systems which do not provide an antiparallel magnetization or do not have the intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.