Semiconductor photo-detector having a two-stepped impurity profile
US4949144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1988 |
| Grant date | Aug 14, 1990 |
| Priority date | — |
| Expiry date | Sep 1, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate, a light absorption layer of a first conductivity type formed on a semiconductor substrate, a multiplication layer of a first conductivity type formed on the light absorption layer to multiply a photocurrent, a semiconductor region of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.