Gas flow systems in CCVD reactors
US4949669A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1988 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Dec 20, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Gas flow structures are described for the inputting and exhausting of gases for a continuous vapor deposition reactor to cause an even flow of gases within the reactor chamber and to prevent the deposition of reaction material on the walls of the reactor chamber. Gas inlet and exhaust port structures are provided for multiple-chamber chemical vapor deposition reactors having gas input and exhaust junctions, wherein the ports may include, in order to provide uniform flow, baffles or a plurality of orifices with or without shutters. Two vertically spaced gas inlets may be used, wherein gas from a second inlet prevents deposition on the reactor chamber from gases introduced through the first inlet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.