Apparatus and method for reactive ion etching
US4950377A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 1989 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Aug 3, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The apparatus includes a means for generating a magnetic field at a first electrode to which a high frequency voltage is applied and includes a generator for generating a rectangular low frequency voltage that is capacitively coupled to a second electrode which carries the substrate to be etched. The low frequency voltage comprises a negative half-wave having a short duration and a positive half-wave. The duration of the negative half-wave is selected to be shorter than a time constant for charging the substrate after a potential change corresponding to the amplitude of the half-wave and the positive half-wave is dimensioned so that the substrate remains free of charges on the average.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.