Method of growing crystalline layers by vapor phase epitaxy
US4950621A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1985 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Nov 6, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/094
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of PA0 (a) providing in the reaction zone of a reaction vessel a heated substrate PA0 (b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table, PA0 (c) passing the gas stream through the reaction zone into contact with the heated substrate, and PA0 (d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.