Diamond laser crystal and method manufacturing the same
US4950625A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1989 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Jun 8, 2009 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a diamond laser crystal having an excellent laser efficiency is performed by first, preparing a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is then thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally annealing is performed on the synthetic diamond to form H3 centers by coupling the type IaA nitrogen atoms contained in the synthetic diamond, with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond at high concentration, while formation of NV centers which become an obstacle to laser action, can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.