High speed noise immune bipolar logic family
US4950924A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1989 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | May 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0008
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A logic gate comprises a bipolar switching transistor and a depletion mode field effect load device. A current independent voltage source and a voltage independent current source are connected in series between an input terminal of the logic gate and a base of the bipolar transistor. The voltage independent current source is a depletion mode field effect transistor having a source and drain which are connected in series with the current independent voltage source and the base of the bipolar transistor. A feedback device is connected in series between a gate of the current source field effect transistor and a gate of the load transistor. A discharge device is connected in parallel with the current independent voltage source for actively discharging a base-emitter junction of the bipolar transistor during switching of the bipolar transistor from an on state to an off state. The logic gate is particularly suitable for use in memory elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.