Integrated circuit device
US4951111A · kind A · utility
7Cited by
5References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 3, 1985 |
| Grant date | Aug 21, 1990 |
| Priority date | — |
| Expiry date | Jan 3, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
An integrated circuit device includes insulated-gate field effect transistors employing a semiconductor gate electrode used as a logic element. Part of the input interconnection layer serves as the semiconductor gate electrode and orthogonally intersects with a conductive layer. The logic circuits are interconnected to constitute a random gate logic circuit that can be operated at high speeds and formed with a high density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.