Method of preparing high purity dopant alloys
US4952425A · kind A · utility
10Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1988 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Jun 27, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/442
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Particles of silicon and a p or n carrier substance which are in spherical or spheroidal form, and suitable for use in the preparation of doped semiconductor devices, can be prepared by a fluidized bed technique for chemical vapor deposition of a carrier substance (B, P, As or Sb). The prepared products have a kernel of high purity polysilicon and a layer of silicon/dopant alloy upon the kernel. Optionally, the particles have a thin outer layer of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.